Grace Semiconductor Assigned Patent

Grace Semiconductor Manufacturing Corporation, Shanghai, China, has been assigned a patent (8,942,044) developed by Yang, Guangjun, Shanghai, China, for a “flash memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A flash memory device is provided. The flash memory device includes a memory cell array and a pre-charge unit. The pre-charge unit, coupled to a plurality of bit lines corresponding with the memory cell array, pre-charges the bit lines to a predetermined voltage during a pre-charge stage. The pre-charge unit includes a voltage stabilizing unit to provide a constant current to the bit lines. Due to the voltage stabilizing unit, in a programming process, the voltage applied to the bit lines which are not related with programming may not drop as a result of current leakage. Therefore, the memory cells except the memory cell to be programmed are kept in cut off state, without a current passing. As a result, interference with the memory cells which are not to be programmed may be effectively avoided and the accuracy of programming may be improved.“

The patent application was filed on August 9, 2012 (113/570,791).