Freescale Assigned Patent

Freescale Semiconductor, Inc., Austin, TX, has been assigned a patent (8,842,469) developed by Jon S. Choy, Chen He, and Michael A. Sadd, Austin, TX, for a “method for programming a multi-state non-volatile memory (NVM).”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method is provided for programming a multi-state flash memory having a plurality of memory cells. A first programming pulse is provided to the flash array; determining a threshold voltage distribution for the plurality of memory cells after providing the first programming pulse. The plurality of memory cells is categorized into at least two bins based on a threshold voltage of each memory cell of the plurality of memory cells. A first voltage is selected for a second programming pulse for programming a first bin of memory cells of the at least two bins, the first voltage based on both a threshold voltage of the first bin and a first target threshold voltage. A second voltage is selected for a third programming pulse for programming a second bin of memory cells of the at least two bins, the second voltage based on both the threshold voltage of the second bin and on a second target threshold voltage.”

 The patent application was filed on Nov. 9, 2010 (12/942,285).