Toshiba to Showcase Trilayer Structure HDD Head

Toshiba Corp. announced the line-up of innovative technologies that it will bring to nano tech 2013 – The 12th International Nanotechnology Exhibition & Conference, the world’s biggest exhibition of nanotechnology, that will be held at the Tokyo Big Sight from January 30 to February 1.

Toshiba will exhibit its next-generation nanotechnology that will help drive "Total storage innovation".

Total Storage Innovations

• NAND flash memory with advanced process technology: 19nm NAND process technology; speed demonstration of hybrid drive (HDD integrated with NAND flash memory)
• Trilayer structure head for HDD: Material and design technologies for nanostructures and magnetic films necessary to realize read heads for large-capacity HDDs
• Mask patterning technology: (hp22nm device) e-beam mask patterning technology required for next-generation semiconductor processes
• Directed Self-Assembly Lithography (DSAL): Low-cost nanopatterning technology for the 10nm node by polymer coating, annealing and development
• Advanced material analysis technique with nanometer spatial resolution: Atomic-level device structure analysis technology that underpins semiconductor reliability
• Transparent conducting films composed of graphene and silver nanowire: Technology for forming multi-layer films composed of graphene, silver nanowires and polymers to realize transparent conducting films that help reduce the weight and increase the flexibility of photoelectric devices