Cypress Adds 16Mb nvSRAMs and Some With Synchronous NAND Interfaces

Cypress Semiconductor Corp. introduced a family of 16-Mbit non-volatile static random access memories, including devices with synchronous NAND flash memory interfaces.

It is a non-volatile SRAM memory that can interface directly with Open NAND Flash Interface (ONFI) and Toggle NAND bus controllers. The 16-Mbit family extends Cypress’s nvSRAM portfolio to address SSD for enterprise systems, high-end Programmable Logic Controllers (PLC), high-speed data/error loggers in storage, and networking equipment.

The 16-Mbit nvSRAMs offer access times as low as 25ns, making them the fastest asynchronous non-volatile RAMs on the market. The new devices are offered with an optional integrated Real-Time Clock (RTC). The RTC enables time-stamping of critical data to be logged.

Cypress nvSRAMs feature infinite read, write and recall cycles, with 20-year data retention, making them a solution for applications requiring continuous high-speed writing of data and non-volatile data security.

"The new 16-Mbit family pushes the envelope of speed, density, and performance while delivering the same superior reliability that is the hallmark of our nvSRAM portfolio," said Babak Taheri, VP of the Non-Volatile Products Business Unit at Cypress. "The synchronous NAND interfaces open multiple new markets to Cypress nvSRAMs and add to the breadth and flexibility of our overall non-volatile offerings."

The ONFI NAND interface nvSRAM supports the ONFI 3.0 NV-DDR interface (100MHz) and the ONFI 3.0 NV-DDR2 interface (200MHz). The Toggle NAND interface nvSRAM is compatible with Toggle 2.0 NAND controllers for DDR operation at 200MHz.

Both ONFI and Toggle versions support single-channel operations in x8 and x16 data bus widths, and dual- and quad-channel operations in x8 bit data bus width, which allows operations of up to 400 million transactions per second.

The 16-Mbit nvSRAM family is sampling, with production expected in the first quarter of 2013.

The CY14V116Fx ONFI and Toggle NAND devices operate on a 3V core, 1.8V IO supply, and they are each available in a 165-ball FBGA package. Both the asynchronous devices with and without RTC are offered in data bus widths of 8 bits, 16 bits and 32 bits, and at different power supply levels of 2.5V, 3V, and 5V. They are available in 44-pin TSOPII, 48-pin TSOPI and 165-ball FBGA packages.

nvSRAMs Cypress’s nvSRAMs use charge stored on an external capacitor instead of a battery, making the devices compatible with standard PCB assembly processes. They are ROHS-compliant and directly replace SRAM, battery-backed SRAM (BBSRAM) and EEPROM devices, offering fast non-volatile data storage. Data transfers from the SRAM to the device’s non-volatile elements take place automatically at power down.

On power up, data is restored to the SRAM from the non-volatile memory. In metering, industrial, automotive and RAID applications, nvSRAMs offer high-speed data transfer while ensuring data integrity in case of power outages, without the need for a battery.