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French Crocus Releases Magnetic-Logic-Unit Technology

That extends Thermally Assisted Switching architecture

Crocus Technology, developer of magnetic semiconductors, announced its Magnetic-Logic-Unit (MLU) architecture, a scalable evolution of Crocus’ Thermally Assisted Switching (TAS) technology, that permits practical implementation of advanced logic and memory capabilities, a first for the industry.

This innovation will expand the market for Crocus’ magnetic technology by opening up new applications in high density data storage, secure commerce and communications, high performance network processing and high temperature automotive and industrial uses.

Traditional magnetic memories are based on arrays of memory cells where each cell contains two magnetic layers in a stacked configuration. The first layer, often called the reference layer, is always magnetized in one direction. The second layer, called the storage layer, is either magnetized in the same direction as the reference layer to store a ‘1’, or the opposite direction to store a ‘0’. Crocus’ new MLU is based on its TAS technology to provide stability to the stored data in normal operation. By leveraging this stability feature, the reference layer in the MLU architecture can be configured with fixed magnetization to implement a traditional NOR function, with floating magnetization to implement a NAND function, or with driven magnetization to implement an XOR function.

In high density memory applications, MLU opens the way to implementation of NAND configurations in magnetic memory, which was previously possible only in Flash memory technology. MLU NAND memory can be two to four times denser than conventional magnetic memory with the added benefit of full random access. Crocus’ MLU XOR, called Match-In-Place, implements ultra-secure compare and encryption functions, making smart cards, identity cards, SIM cards, and near-field communications (NFC) devices tamper-proof. Match-In-Place also implements the search and compare functions required in network routing applications and high performance computing and can achieve up to fifty times the density of conventional CMOS hardware search processors. In addition, MLU in all its configurations is capable of normal operation at temperatures up to 200 degrees C, for use in automotive and industrial electronics.

"MLU has the potential to replace SRAM, DRAM, NAND, NOR and OTP in many stand alone and embedded memory products," said Bertrand F. Cambou, executive chairman of Crocus Technology. "Because MLU’s NOR, NAND and XOR capabilities are built on a single wafer manufacturing process with different design architectures, they can be easily integrated into SoC implementations."

MLU is compatible with Crocus’ current wafer manufacturing process. Crocus will establish volume production of MLU based products in 130nm at its foundry partner Tower Jazz Semiconductor, as well as at its new Russian subsidiary Crocus Nano Electronics (CNE) for 90nm, 65nm, 45nm, and smaller lithography. Both will be based on magnetic technology developed in Crocus’ Grenoble facility in cooperation with its clean room partner Minatec.

Comments

The Russian nanotechnology investment company Rusnano has made a total commitment of $300 million to invest in MRAM manufacturing company in Russia, CNE, a joint-venture with Crocus.

CNE  will manufacture medium to high density MRAM products based on Crocus' technology.

Crocus will control 51% of the joint venture that is supposed to begin mass producing MRAM chips in 2013.

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