GlobalFoundries Singapore Assigned Patent

GlobalFoundries Singapore Pte. Ltd., Singapore, Singapore, has been assigned a patent (12266702) developed by Teh; Young Way, Zhu; Bin, Mukhopadhyay; Madhu Sudan, and Sundareswara; Subramanian, Singapore, Singapore, for “flash memory devices with thickened source/drain silicide.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Structures for a memory device and methods of forming a structure for a memory device. The structure includes a first and second source/drain regions in a semiconductor substrate, a first gate stack on the semiconductor substrate, and a second gate stack on the semiconductor substrate adjacent to the first gate stack. The first and second gate stacks are positioned in a lateral direction between the first source/drain region and the second source/drain region. The first gate stack includes first and second gate electrodes, and the first gate electrode includes segments spaced apart along a longitudinal axis of the first gate stack.”

The patent application was filed on 2022-06-08 (17/834982).