Entegris Assigned Patent

Entegris, Inc., Billerica, MA, has been assigned a patent (12267999) developed by Lee; SungHae, Suwon-si, Korea, for a “3-dimensional NAND memory with reduced thermal budget.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Methods of manufacture and memory cells manufactured according to the methods are described. The manufacture has a lower thermal budget and experiences less heating by including a blocking layer including MgO. The method of manufacture may include annealing following deposition of the MgO, with the annealing occurring at temperatures below 900° C. or below 800° C. The blocking layers may be a first blocking layer made of SiO.sub.2 and a second blocking layer made of MgO. The memory cells may have a CMOS Under Array (CuA) structure. The memory cells may be part of a three-dimensional NAND memory device.”

The patent application was filed on 2020-07-13 (17/626446).