Samsung Electronics and President and Fellows of Harvard College Assigned Patent

Samsung Electronics Co., Ltd., Gyeonggi-do, Korea, and President and Fellows of Harvard College, Cambridge, MA, has been assigned a patent (12268106) developed by Lee; Minhyun, Suwon-si, Korea, Jang; Houk, Ham; Donhee, Liu; Chengye, Hinton; Henry, Cambridge, MA, Kim; Haeryong, Seongnam-si, Korea, and Shin; Hyeonjin, Suwon-si, Korea, for “nonvolatile memory device and operating method of the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.”

The patent application was filed on 2023-02-10 (18/167354).