CEA and Weebit Nano Assigned Patent
Determining manufacturing parameter of resistive random access memory cell
This is a Press Release edited by StorageNewsletter.com on March 25, 2025 at 2:00 pmCommissariat à l’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, and Weebit Nano Ltd., Hod-Hasharon, Israel,, has been assigned a patent (12224007) developed by Molas; Gabriel, Grenoble, France, Piccolboni; Guiseppe, Verona, Italy, Regev; Amir, Modiin, Israel, Castellan; Gaël, and Nodin; Jean-François, Grenoble, France, for a “method for determining a manufacturing parameter of a resistive random access memory cell.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for determining a value of a manufacturing parameter of a resistive memory cell, the resistive memory cell including a stack of layers, includes providing reference memory cells corresponding to technological alternatives of the stack of layers; measuring for each reference memory cell an initial resistance value; determining for each reference memory cell a programming parameter value selected from among the resistance in a high resistance state and the programming window; establishing a relationship between the programming parameter and the initial resistance from the initial resistance values and the programming parameter values; and determining the manufacturing parameter value for which the programming parameter is greater than or equal to a target value, from the relationship between the programming parameter and the initial resistance and from a dependency relationship between the initial resistance and the manufacturing parameter.”
The patent application was filed on 2020-06-11 (17/618250).