University of Southern California Assigned Patent
Non-volatile electro-optical high-bandwidth ultra-fast large-scale memory architecture
By Francis Pelletier | March 20, 2025 at 3:11 pmUniversity of Southern California, Los Angeles, CA, has been assigned a patent (12254913) developed by Jacob; Ajey, and Jaiswal; Akhilesh, Los Angeles, CA, for a “non-volatile electro-optical high-bandwidth ultra-fast large-scale memory architecture.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “An ultrafast non-volatile memory cell for wafer-scale integration includes a voltage divider that outputs an output voltage. The voltage divider includes a reference resistive device that is a reference magnetic tunnel junction or another reference resistive component and a switchable magnetic tunnel junction that includes a free magnet and a fixed magnet. The switchable magnetic tunnel junction configured such that the free magnet is light switchable between a high impedance state and a low impedance state upon application of an electric signal and incident light. A transistor switch is configured to activate the voltage divider for memory write and read operations. A light modulator is in electrical communication with the output voltage from the voltage divider. The light modulator is configured to modulate a guided light beam for memory read operations. Arrays of the memory cells are also provided.”
The patent application was filed on 2021-10-05 (18/030380).