Industry-University Cooperation Foundation Hanyang University and Erica Campus Assigned Patent

Industry-University Cooperation Foundation Hanyang University, Ansan-Si, Korea, and Erica Campus, Ansan-Si, Korea, has been assigned a patent (12250823) developed by Kim; Younghyun, Seoul, Korea, An; Seongui, Ansan-si, Korea, Jin; Taewon, Uijeongbu-si, Korea, Noh; Taehyeon, Yongin-si, Korea, and Chen; Simin, Ansan-si, Korea, for a “non-volatile memory device and its operating method.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed herein are a non-volatile memory device and an operating method thereof. The non-volatile memory device includes a memory cell including a write transistor and a ferroelectric read transistor, a write word line connected to a gate terminal of the write transistor, a write bit line connected to a source terminal of the write transistor, a read word line connected to a source terminal of the ferroelectric read transistor, and a read bit line connected to a drain terminal of the ferroelectric read transistor, and a drain terminal of the write transistor may be connected to a gate terminal of the ferroelectric read transistor. According to the present invention, a low-power, high-density, and non-destructive dynamic random access memory (DRAM) can be implemented by realizing 2T0C FeDRAM based on a silicon complementary metal-oxide semiconductor (CMOS) process using a dielectric material.”

The patent application was filed on 2023-12-15 (18/541812).