R&D: Effect of Cobalt Doping on Resistive Switching Process in Zno and Tio2 Nanostructures for Flexible NVMs

SSRN Heliyon has published an article written by Heiddy Paola Quiroz Gaitán, Cristian Leonardo Terán, Jorge Arturo Calderón, and Anderson Dussan Cuenca, National University of Colombia, Colombia.

Abstract: “The RRAMs memories are characterized by a metal/insulator/metal architecture; however, this work proposes an alternative configuration based on metal/oxide-diluted magnetic semiconductors (O-DMS)/metal due to the promising performance of magnetic control of resistive switching. The structural, morphological, magnetic, and electric properties of cobalt doped ZnO and TiO2 thin films, fabricated via DC magnetron sputtering, were studied. HR-SEM and AFM micrographs evidenced the formation of small grains on the surface associated with the growth mechanism for the thin films. Electrical and magnetic characterization shows a contribution of lattice free electrons, produced by oxygen vacancies, and Co ions randomly located into the oxide semiconductor matrix, in the SET and RESET states. A comparative study of ZnO and TiO2 semiconductor matrices suggests low energy consumption in the process and expansion of storage capacity, due to both high and low resistive states modified by the presence of magnetic ions in the semiconductor matrix.“