R&D: Modeling Methodology for Thermo-Structural Analysis of V-NAND Flash Memory Structure

Scientific Reports has published an article written by Yongha Kim, Seungjun Ryu, and Sungryung Lee, School of Mechanical Engineering, Chungnam National University, Daejeon, 34134, Republic of Korea.

Abstract: “This study proposes modeling methodology based on a continuous model for conducting thermo-electric-structural analyses of V-NAND flash memory structure under the Joule heating effect. The modeling methodology is based on a homogeneous method for investigating the thermal mechanical characteristics of a V-NAND flash memory structure. Firstly, theoretical formulation of thermo-electric behavior with Joule heating effect is presented by energy balance equation, Watt’s law. Secondly, we formulate governing equation for thermo-electric-structural behaviors by defining displacement function of the RUC of V-NAND flash memory structure. The modeling methodology was verified by 3D finite element analysis. Parametric analysis was performed to investigate the thermal mechanical characteristics of a structure based on the proposed modeling methodology. Finally, optimization is performed using the proposed modeling methodology to increase the integration of V-NAND flash memory. Also, response surface methodology is used for more efficient optimization, and the response function is the failure index, which is formulated as follows based on results of the parameter analysis. Based on the results, a database of the thermal mechanical characteristics of a V-NAND flash memory structure could be obtained for applications in new-generation semiconductors. The modeling methodology features relative simplicity and computational efficiency.“