Phison Electronics Assigned Six Patents

Regulator circuit module, memory storage device and voltage control method
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12235667) developed by Ku; Po-Chih, Changhua County, Taiwan, for “regulator circuit module, memory storage device and voltage control method.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A regulator circuit module, a memory storage device, and a voltage control method are disclosed. The method includes: generating an output voltage according to an input voltage by a driving circuit; generating a feedback voltage according to the output voltage; controlling the driving circuit to adjust the output voltage according to the feedback voltage by a regulator circuit; compensating an output of the regulator circuit by a compensating circuit; and activating or deactivating the compensating circuit according to an input bypass-voltage of a switch circuit.”

The patent application was filed on 2022-12-13 (18/079900).

Status checking method, memory storage device and memory control circuit unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12236132) developed by Jean; Sebastien, Miaoli, Taiwan, and Liang; Ming-Jen, Hsinchu, Taiwan, for “status checking method, memory storage device and memory control circuit unit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: sending a first operation command sequence to a rewritable non-volatile memory module to instruct a first memory module in the rewritable non-volatile memory module to perform a first operation; obtaining a first time threshold value corresponding to the first operation; updating a first counting value corresponding to the first memory module; and sending a first query command sequence to the rewritable non-volatile memory module to query a status of the first memory module, in response to that the first counting value reaches the first time threshold value.”

The patent application was filed on 2022-01-11 (17/573567).

Memory management method, memory storage device, and memory control circuit unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12216933) developed by Tan; Kok-Yong, Miaoli County, Taiwan, for “memory management method, memory storage device, and memory control circuit unit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory management method, a memory storage device, and a memory control circuit unit are provided. The method includes establishing a connection between the memory storage device and a host system; receiving a first request from the host system via the connection; detecting a status of the memory storage device in a time range according to the first request; and determining whether to use a memory in the host system according to the status.”

The patent application was filed on 2023-09-19 (18/469561).

Signature verification method, memory storage device and memory control circuit unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12206793) developed by Chuang; Aaron C, Taipei, Taiwan, and Chen; Meng-Chang, Miaoli County, Taiwan, for “signature verification method, memory storage device and memory control circuit unit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A signature verification method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: reading first data, signature information, and first verification information from a memory storage device; performing a first verification operation according to the signature information and the first verification information; generating second verification information according to the first data; performing a second verification operation according to the first verification information and the second verification information; and performing a corresponding process on the first data according to an operation result of the first verification operation and an operation result of the second verification operation.”

The patent application was filed on 2022-08-01 (17/878084).

Decoding method, memory storage device and memory control circuit unit
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12197737) developed by Su; Po-Cheng, Hsinchu, Taiwan, Hsu; Yu-Cheng, Yilan County, Taiwan, and Lin; Wei, Taipei, Taiwan, for “decoding method, memory storage device and memory control circuit unit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A decoding method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending at least one read command sequence instructing to read a first physical unit in a rewritable non-volatile memory module; receiving response data from the rewritable non-volatile memory module, wherein the response data includes a plurality of identification bits, and the plurality of identification bits reflect a voltage variation of a first bit line where a first memory cell in the first physical unit is located during a discharge process; determining a decoding parameter corresponding to the first memory cell according to the plurality of identification bits; and decoding data read from the first memory cell according to the decoding parameter.”

The patent application was filed on 2023-02-14 (18/168573).

Overcurrent protection circuit, memory storage device and overcurrent protection method
Phison Electronics Corp., Miaoli, Taiwan, has been assigned a patent (12191651) developed by Chou; Shu-Han, New Taipei, Taiwan, for “overcurrent protection circuit, memory storage device and overcurrent protection method.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An overcurrent protection circuit, a memory storage device, and an overcurrent protection method are disclosed. The overcurrent protection circuit includes a load switch, a first mirror circuit, a second mirror circuit, and a control circuit. The first mirror circuit is configured to generate a first node voltage in a state that a voltage difference between two terminals of the load switch is within a first voltage region. The second mirror circuit is configured to generate a second node voltage in a state that the voltage difference between the two terminals of the load switch is within a second voltage region. The control circuit is configured to cut off the load switch according to at least one of the first node voltage and the second node voltage to perform an overcurrent protection. The first voltage region is different from the second voltage region.”

The patent application was filed on 2021-12-08 (17/546025).