STMicroelectronics Assigned Patent

STMicroelectronics (Crolles 2) SAS, Crolles, France, STMicroelectronics (Grenoble 2) SAS, Grenoble, France, and STMicroelectronics (Rousset) SAS, Rousset, France, has been assigned a patent (12232435) developed by Arnaud; Franck, St. Nazaire les Eymes, France, Galpin; David, Le Cheylas, France, Zoll; Stephane, Froges, France, Hinsinger; Olivier, Barraux, France, Favennec; Laurent, Villard Bonnot, France, Oddou; Jean-Pierre, Saint-Ismier, France, Broussous; Lucile, Goncelin, France, Boivin; Philippe, Venelles, France, Weber; Olivier, Grenoble, France, Brun; Philippe, Meylan, France, and Morin; Pierre, Kessel-Lo, Belgium, for a “chip containing an onboard non-volatile memory comprising a phase-change material.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An integrated circuit includes a substrate with an active area, a first insulating layer, a second insulating layer, and a phase-change material. The integrated circuit further includes a heating element in an L-shape, with a long side in direct physical contact with the phase-change material and a short side in direct physical contact with a via. The heating element is surrounded by first, second, and third insulating spacers, with the first insulating spacer having a planar first sidewall in contact with the long side of the heating element, a convex second sidewall, and a planar bottom face in contact with the short side of the heating element. The second and third insulating spacers are in direct contact with the first insulating spacer and the long side of the heating element.”

The patent application was filed on 2023-04-03 (18/130184).