IOTMemory Technology Assigned Patent

IOTMemory Technology Inc., Taipei, Taiwan, has been assigned a patent (12225723) developed by Fan; Der-Tsyr, Huang; I-Hsin, Taoyuan, Taiwan, and Cheng; Tzung-Wen, New Taipei, Taiwan, for a “non-volatile memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory device includes at least one memory cell, and the at least one memory cell includes a substrate, a stacked structure, a tunneling dielectric layer, a floating gate, a control gate structure, and an erase gate structure. The stacked structure is disposed on the substrate, and includes a gate dielectric layer, an assist gate, and an insulation layer stacked in order. The tunneling dielectric layer is disposed on the substrate at one side of the stacked structure. The floating gate is disposed on the tunneling dielectric layer and includes an uppermost edge and a curved sidewall. The control gate structure covers the curved sidewall of the floating gate. The erase gate structure covers the floating gate and the control gate structure, and the uppermost edge of the floating gate is embedded in the erase gate structure.”

The patent application was filed on 2022-03-30 (17/709370).