Shanghai Institute of Microsystem and Information Technology – Chinese Academy of Sciences Assigned Patent

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China, has been assigned a patent (12219888) developed by Song; Zhitang, and Song; Sannian, Shanghai, China, for “phase change memory and method for making the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure provides a phase change memory and a method for making the same. The phase change memory includes a substrate, a plurality of phase change memory cells, and an isolation material layer. The plurality of phase change memory cells are separately disposed on the substrate, the phase change memory cell sequentially includes, from bottom to top, a first electrode material layer, a first transition material layer, an ovonic threshold switching (OTS) material layer, a second transition material layer, a second electrode material layer, a third transition material layer, a phase change material layer, a fourth transition material layer, and a third electrode material layer; The isolation material layer is disposed on the substrate and surrounds side surfaces of the phase change memory cell, and the plurality of phase change memory cells are isolated from each other by isolation material layer.”

The patent application was filed on 2019-11-04 (17/607892).