Huazhong University of Science and Technology Assigned Patent

Huazhong University of Science and Technology, Hubei, China, has been assigned a patent (12154621) developed by Wang; Xingsheng, Yang; Fan, Zhou; Lingjun, Wang; Chengxu, and Miao; Xiangshui, Hubei, China, for a “read and write circuit of three-dimensional phase-change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A read and write circuit of a three-dimensional phase-change memory including an operation control circuit and a read and write operation circuit connected to each other. The operation control circuit is configured to load a correct operation pulse onto the read and write operation circuit. A read and write unit in the read and write operation circuit is connected to a memory cell and is configured to load the correct operation pulse onto the memory cell corresponding to the three-dimensional phase-change memory and to mirror the correct operation pulse to a mirror current. A bandgap reference source and a hysteresis comparator are connected to a mirror circuit branch. A feedback chopper circuit loop is connected across the memory cell and the mirror circuit branch and is configured to monitor a current flowing through the memory cell in real time.”

The patent application was filed on 2022-07-26 (17/873186).