Samsung Completes Joint Validation of 128GB CMM-D With Lenovo Servers

Samsung Electronics Co., Ltd. has once again advanced memory technology with faster, higher-capacity solutions, it has developed an industry’s first 128GB CXL Memory Module-DRAM (CMM-D).

Leveraging its cutting-edge 12nm-class 32Gb double Data Rate 5 (DDR5) DRAM and Montage Technology’s next-gen controller, Samsung’s latest CMM-D delivers a 10% improvement in bandwidth and a 20% reduction in latency compared to the previous model.

Successfully tested on Lenovo’s CXL-based servers, the company’s memory solution highlights its potential for high-performance required for the AI era. As a next-gen interface, CXL enables more efficient management of accelerators, DRAM and storage devices used with CPUs in high-performance servers. 

75% increase in memory capacity, 80% boost in bandwidth compared to non-CXL servers

Samsung has increased the number of CMM-D per single server by 50%, boosting the maximum from 8 to 12. This expansion enhances memory capacity by 75% and bandwidth by 80% compared to non-CXL servers.

Recently, Lenovo Group Ltd. held a’ PlugFest’ event to validate the compatibility of features defined in the CXL standard using Samsung’s CMM-D on Lenovo’s next-gen systems (SR630/SR650) with Xeon 6 processors. Alongside Samsung and Lenovo, Intel corp. and Montage have also collaborated in the validation process.

Samsung and Lenovo showcase accomplishments of collaboration at joint validation event
At the PlugFest event, Samsung successfully confirmed the possibility of introducing CXL in the Lenovo system. The company’s CMM-D is expected to be widely adopted in various applications, including AI and HPC.

Committed to addressing the industry’s need for both performance and capacity, the firm continues to push the boundaries of memory technology. The company is developing next-gen 256GB CMM-D without TSV ⁽¹⁾ technology. This innovation is anticipated to reduce TCO and accelerate the adoption of CXL for future systems.

Technological progress often come through incremental advancements and sometimes surprise us with innovations. Samsung remains dedicated to the timely delivery of CMM-D products optimized for high-capacity memory required by customers.

The collaboration with Lenovo is poised to enable transformative changes for the next-gen of computing.

⁽¹⁾ TSV (Through Silicon Via) is a packaging technology that replaces the conventional wires used to connect chips. DRAM chips are cut to a thickness of less than a sheet of paper and stacked. Then, each chip is punched with microscopic holes and connected by electrodes to the neighboring chips above and below.