R&D: Phase Transition Behavior and Electrical Properties of C/Sb2te3 Multilayer Films on Flexible Polyimide Substrates

SSRN has published an article written by Shiwei Gao, Chenjie Pan, Xiaolin Liu, Donghua University, Feng Su, Yifeng Hu, Jiangsu University of Technology, and Liangcai Wu, Donghua University.

Abstract: “Phase change memory has become one of the ideal choices for flexible electronic memory due to its advantages of fast operation speed, high durability and low power consumption. This paper is dedicated to the preparation of C/Sb2Te3 multilayer films on polyimide (PI) substrates for high-performance flexible phase change memory (FPCM). The findings indicate that C/Sb2Te3 multilayer films on PI substrates exhibit superior thermal stability (higher than that of Silicon substrates) and excellent mechanical bending properties (up to 1×104 bending cycles). The variations in optical properties, crystal structure, resistance drift and morphology were systematically investigated for the flat state, 5×103 bending cycles and 1×104 bending cycles. FPCM devices based on [C (2 nm)/Sb2Te3 (10 nm)]5 multilayer films have been fabricated, which are capable of reversible SET/RESET operation in the flat, bending state and 1×103 bending cycles. An electrothermal model of the FPCM device cell based on C/Sb2Te3 was constructed, and the simulation results confirmed its good thermal confinement capability (~1278 K). This study demonstrates the potential of C/Sb2Te3 multilayer films based on PI substrates in FPCM.“