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FMS 2024: Advantest to Showcase Memory Test Solutions

Including next-gen flash/NVM test solutions T5851-STM32G and T5230 systems, B6700 test system, T5835 multifunctional memory test system, MPT3000HVM3, and Independent Thermal Control and Engineering Thermal Chamber for MPT3000

Advantest Corporation will showcase its latest memory devices and memory system-level solutions at the Future of Memory and Storage 2024 (FMS) on Augusy 6-8 at the Santa Clara Convention Center in Santa Clara, CA.

MPT3000HVM3 test system

Advantest Mpt3000hvm 1722583106Advantest, gold sponsor of the event, is celebrating its 70th anniversary this year under the theme ‘Facing the Future Together,’ and it will honor this milestone with valued customers and industry partners at this year’s event.

Product Highlights
At its booth, the company will feature its end-to-end memory test solutions for testing next-gene memory chips, such as high-bandwidth memory (HBM), DRAM, NAND flash, NVM and SSD devices.

Products display will include:

T5851-STM32G

Advantes T5851 Stm32g Fms

  • Next-gen flash/NVM test solutions, like the T5851-STM32G, capable of testing and covering the latest-gen of embedded protocol NAND devices with UFS/PCIe interface up to 32Gb and T5230 with a combined array architecture to reduce test cost for NAND/NVM wafer test, including DRAM wafer-level burn-in (WLBI).

  • B6700 test system that fulfills the need for high-volume burn-in test solutions by testing multiple burn-in boards in parallel at speeds up to 10MHz.

  • T5835 multifunctional memory test system that provides high-speed memory test coverage for a diverse variety of next-gen memory chips.

  • MPT3000HVM3 test system that addresses test requirements associated with PCIe Gen 5, Compute Express Link (CXL) and NVMe SSDs.

  • Independent Thermal Control (ITC) and the Engineering Thermal Chamber (ETC) for the MPT3000 that provide QA and R&D teams with advanced, accurate thermal control on a per-DUT level during device characterization or small lot production testing.

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