Attopsemi Technology Assigned Patent

Attopsemi Technology Co., Ltd., Hsinchu, Taiwan, has been assigned a patent (12002527) developed by Chung; Shine C., San Jose, CA, for a “programmable resistance memory on wide-bandgap semiconductor technologies.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Programmable resistive memory can be integrated with wide-bandgap semiconductor devices on a wide-bandgap semiconductor, silicon, or insulator substrate. The wide-bandgap semiconductor can be group IV-IV, III-V, or II-VI crystal or compound semiconductor, such as silicon carbide or gallium nitride. The programmable resistive memory can be PCRAM, RRAM, MRAM, or OTP. The OTP element can be a metal, silicon, polysilicon, silicided polysilicon, or thermally insulated wide-bandgap semiconductor. The selector in a programmable resistive memory can be a MOS or diode fabricated by wide-bandgap semiconductor.”

The patent application was filed on 2022-01-25 (17/584297).