R&D: Amino Acid-Modified Wrinkled Graphene Oxide (AAM-GO) Nanofiber Embedded in Poly(mMethyl Methacrylate) (PMMA) for Long-Term Archival Memory Applications

ACS Applied Electronic Materials has published an article written by Anindya S. Manna, Department of Chemistry, University of Calcutta, 92 A. P. C. Road, Kolkata 700009, India, Mainak Saha, Electronic Science Department, University of Calcutta, 92 A. P. C. Road, Kolkata 700009, India, Somrita Mondal, Department of Chemistry and Physics, Southwestern Oklahoma State University, Weatherford, Oklahoma 73096, United States, Sk Masum Nawaz, Abhijit MalliK, Electronic Science Department, University of Calcutta, 92 A. P. C. Road, Kolkata 700009, India, and Dilip K. Maiti, Department of Chemistry, University of Calcutta, 92 A. P. C. Road, Kolkata 700009, India.

Abstract: “With the growth of modern data-driven technology, the demand for long-term and stable memory devices has become the primary focus. Over the decades, organic material-based resistive memory devices have shown promising nonvolatile memory performance. In this connection, low-cost graphene materials have found many advances. Graphene oxide-based materials with a chemically adjustable structure, low mass density, good specific surface area, electrical conductivity, and thermoresistance are promising candidates for such memory devices. Graphene-based nanofiber materials are reported to outperform their nanotube counterparts in long-term storage device applications. In this study, we report for the first time a highly stable resistive memory device of graphene in the oxidized form as an amino acid-modified graphene oxide (AAM-GO) wrinkled nanostructure with fiber morphology embedded in poly(methyl methacrylate) (PMMA) as the active layer. The current–voltage characteristics of the device exhibit a write-once-read-many (WORM) times memory behavior, with a cyclic endurance of >10⁴ cycles and data retention of >10⁷ s. The high ON-OFF ratio of >10³ remained consistent during the entire testing duration. A suitable mechanism is suggested for such high stability of the device.“