Lam Research Assigned Patent

Lam Research Corporation, Fremont, CA, has been assigned a patent (11972952) developed by Deng, Ruopeng, San Jose, CA, Ba, Xiaolan, Fremont, CA, Yu, Tianhua, Tracy, CA, Pan, Yu, and Gao, Juwen, San Jose, CA, for an “atomic layer deposition on 3D NAND structures.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.”

The patent application was filed on 2019-12-13 (17/312594).