R&D: Nonvolatile Ternary Memory Devices Based on MoO3 Nanoparticles Embedded in Conjugated Copolymer with Hierarchy Charge Traps

The Journal of Physical Chemistry C has published an article written by Haifeng Yu, School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, PR China, Yijia Zhou, MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, PR China, Yanting Du, Jiayu Li, Songhao Zhao, Shuhong Wang, School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, PR China, and Haiyang Chang, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, PR China.

Abstract: “A D–A conjugated polymer was used in fabrication of memory devices. However, devices using polymers as active layers alone do not lead to satisfactory results. In this paper, we have synthesized a donor–acceptor conjugated polymer by the Suzuki coupling reaction. The memory devices prepared by the polymer exhibit a ternary memory behavior. MoO₃ nanoparticles have a large number of oxygen vacancies on their surface that can act as charge traps. MoO₃ nanoparticles (NPs) are mixed with polymers to prepare memory devices for improved memory performance. The relationship between the mass percentage of MoO₃ NPs and the storage performance and mechanism of the storage device is studied. The first and second threshold voltages of the memory device are −0.5 and −0.75 V, respectively. A current ratio of 1:10^2.14:10^4.75 for the “0″, “1”, and “2” resistance states of the device indicates a low probability of read/write errors. This work shows that polymer-embedded nanoparticle materials have practical application value in the field of next-generation nonvolatile memories.“