IBM Assigned Seven Patents

Insulated phase change memory using porous dielectrics
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11980110) developed by Philip; Timothy Mathew, Albany, NY, Chandra; Anirban, Troy, NY, Brew; Kevin W., Niskayuna, NY, and Clevenger; Lawrence A., Saratoga Springs, NY, for an “insulated phase change memory using porous dielectrics.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Insulated phase change memory devices are provided that include a first electrode; a second electrode; a phase change material disposed in an electrical path between the first electrode and the second electrode; and a porous dielectric configured to concentrate heat produced by a reset current carried through the phase change material between the first electrode and the second electrode to mitigate an amount of heat that escapes from the phase change material. The porous dielectric may be an inherently porous dielectric material or a dielectric material in which porous structures are induced during fabrication. Methods of fabrication of such devices are also provided.”

The patent application was filed on 2021-09-20 (17/479321).

Confined bridge cell phase change memory
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11980111) developed by Ok; Injo, Loudonville, NY, Simon; Andrew Herbert, Fishkill, NY, Brew; Kevin W., Sankarapandian; Muthumanickam, Niskayuna, NY, McDermott; Steven Michael, Wynantskill, NY, and Saulnier; Nicole, Slingerlands, NY, for a “confined bridge cell phase change memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.”

The patent application was filed on 2021-09-08 (17/447073).

Contact resistance of metal liner in phase change memory cell
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11957069) developed by Ok; Injo, Loudonville, NY, Gluschenkov; Oleg, Tannersville, NY, Reznicek; Alexander, Troy, NY, and Seo; Soon-Cheon, Glenmont, NY, for a “contact resistance of a metal liner in a phase change memory cell.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An approach to provide a semiconductor structure for a phase change memory cell with a first liner material surrounding a sidewall of a hole in a dielectric material where the hole in the dielectric is on a bottom electrode in the dielectric material. The semiconductor structure includes a layer of a second liner material on the first liner material, where the second liner material has an improved contact resistance to a phase change material. The semiconductor structure includes the phase change material abutting the layer of the second liner material on the first liner material. The phase change material fills the hole in the dielectric material. The second liner material that is between the phase change material and the first liner material provides a lower contact resistivity with the phase change material in the crystalline phase than the first liner material.”

The patent application was filed on 2021-10-22 (17/451861).

Phase change memory cell spacer
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11930724) developed by Ok; Injo, Loudonville, NY, Saulnier; Nicole, Slingerlands, NY, Sankarapandian; Muthumanickam, Niskayuna, NY, Simon; Andrew Herbert, Fishkill, NY, McDermott; Steven Michael, Wynantskill, NY, and Saraf; Iqbal Rashid, Glenmont, NY, for a “phase change memory cell spacer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory (PCM) cell includes an electrode, a heater electrically connected to the electrode, a PCM material electrically connected to the heater, a second electrode electrically connected to the PCM material, an electrical insulator surrounding the PCM material, and a shield positioned between the PCM material and the electrical insulator, the shield comprising a reactive-ion-etching-resistant material.”

The patent application was filed on 2021-08-20 (17/407519).

Embedded heater in phase change memory material
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11910731) developed by Han; Jin Ping, Yorktown Heights, NY, Oldiges; Philip Joseph, Lagrangeville, NY, Bruce; Robert L., White Plains, NY, and Chen; Ching-Tzu, Ossining, NY, for an “embedded heater in a phase change memory material.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory cell for a semiconductor device that includes a heater element on a first conductive layer with a spacer surrounding sides of the heater element. The phase change memory cell includes a first dielectric layer on the conductive layer and on a bottom portion of the spacer surrounding the heater element and a second dielectric layer on the first dielectric layer surrounding a top portion of the heater element. The phase change memory cell includes a phase change material on a top surface of the heater element and on the second dielectric material.”

The patent application was filed on 2021-02-10 (17/172118).

Phase change memory with heater
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11895934) developed by Cheng; Kangguo,Schenectady, NY, Park; Chanro, Clifton Park, NY, Frougier; Julien, Albany, NY, and Xie; Ruilong, Niskayuna, NY, for a “phase change memory with heater.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory (PCM) structure including a bottom electrode, a first dielectric spacer disposed above and in contact with the bottom electrode, the first dielectric spacer comprising a vertical seam, a PCM layer disposed above the first dielectric spacer, and a heater element disposed in the seam and in contact with the bottom electrode.”

The patent application was filed on 2021-08-25 (17/412157).

Crossbar memory array in front end of line
International Business Machines Corporation, Armonk, NY, has been assigned a patent (11889774) developed by Sadana; Devendra K., Pleasantville, NY, Li; Ning, and Hekmatshoartabari; Bahman, White Plains, NY, for a “crossbar memory array in front end of line.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A structure including a bottom electrode, a phase change material layer, the phase change material layer includes a similar lattice constant as a lattice constant of the substrate, a top electrode on and vertically aligned with the phase change material layer, a dielectric material horizontally isolating the bottom electrode from the top electrode and the phase change material layer. A structure including a phase change material layer selected from amorphous silicon, amorphous germanium and amorphous silicon germanium, a top electrode on the phase change material layer, a bottom electrode, a dielectric material isolating the bottom electrode from the top electrode and the phase change material layer. Forming a bottom electrode, forming a phase change material layer adjacent to the bottom electrode, forming a top electrode above the phase change material, forming a dielectric material horizontally isolating the bottom electrode from the top electrode and the phase change material layer.”

The patent application was filed on 2021-12-07 (17/457926).