Embedded World: ATP Electronics Shows High-Endurance, Robust Cross-Temp Reliability 176-Layer Storage and DDR5-5600 Solutions

ATP Electronics, Inc. announces its participation in one of the largest global platforms for the embedded community, the Embedded World Exhibition and Conference in Nuremberg, Germany, on April 9-11, 2024.

It again demonstrates its commitment to redefine memory and storage reliability, scalability, and efficiency. Attendees to Embedded World 2024 can expect to see a new breed of flash storage solutions with the firm’s 176-layer NAND flash, industrial enterprise-readiness for edge computing and AI, and latest DDR5-5600 memory offerings.

Diverse, specialized high-endurance 176-Layer storage solutions:

• Form factor, capacity, and interface options. A range of removable and embedded storage options are available to meet different needs. These solutions may be tailored for application-‑specific requirements, as ATP is equipped with hardware design and manufacturing as well as firmware capabilities.

• • SD/microSD memory cards. The S650Si (64 to 512GB) and S750Pi (16 to 128GB) Series offer high-endurance, continuous video recording. They are for growing segments spurred by 5G, AI, and edge technologies, such as AI-enabled surveillance, smart homes, mobile monitoring, automotive recorders, remote healthcare, and security surveillance systems requiring heavy write and re-write usage. 
    

• • M.2 2280/U.2/E1.S SSDs. Thanks to the company’s self-packaged prime 512Gb die, the N651 Series delivers capacities ranging from 960GB to 7.68TB for the U.2/E1.S SSDs, and 240GB to 3.84TB for the M.2 2280 SSDs in industrial temperature environments.

• • CFexpress Type B cards. The N651Si/N601Sc Series CFexpress Type B cards are a 1st in the industry to adopt the NVMe protocol with the PCIe Gen4 x2 interface, with sequential RW speeds of 3,500/3,200MB/s. Available in capacities ranging from 128GB to 1TB. These cards feature optional TCG Opal 2.0 data encryption/decryption, optional hardware write-protect‑ security, and software RAID-0, 1 compatibility.

• Endurance options with native triple level cell, pseudo single level cell configurations. The company offers suitable endurance configurations tailored to specific storage capacities to cater to a range of application requirements. By choosing the device that is right for them, customers can optimize the TCO through maximum uptime, minimal operation disruptions due to device failures, and higher investment returns with longer service life.

  • Native TLC. Storage solutions in native TLC offer up to 5K+ P/E cycles.

  • pSLC. For customers requiring higher-endurance solutions, products configured as pSLC offer up to 100K+ P/E cycles.

• Robust cross-temperature error handling. Operating in extreme temperature variations, such as writing at low and reading at high temperatures, can increase the occurrence of error bits, potentially jeopardizing data integrity over time. ATP solutions built on 176-layer NAND flash boast excellent cross-temperature reliability. This translates to low bit errors and better transmission accuracy for higher data integrity. Even as the NAND approaches the end of its operational life, the firm’s cross-temperature error handling feature reduces errors and preserves data integrity.

Upcoming industrial enterprise edition product line
To tackle the storage requirements on the convergence of IT and operational technology (OT), and the acceleration of edge computing together with AI, in the spotlight for this year’s Embedded World Exhibition are the upcoming Industrial Enterprise Edition N651Sie SSDs. They are Enterprise Standard rated with more than 2.5 Drive Writes Per Day (DWPD) and provide excellent QoS (99.9999% read <90µs, Write <10µs under 4KB random QD1 workload).

The company’s ‘Industrial Enterprise Edition’ consists of flash storage solutions that are designed, built, and tested/validated according to rigid standards for reliable operation and long product lifetime with high-quality service. They comply with the firm’s Enterprise Readiness Standards (ERS), including stringent testing and enhanced firmware features, to meet edge computing requirements of reduced latency, better cost-effectiveness, real-time analytics, and accessibility. They are ideal as boot drives but are also suitable for storage and hybrid usage. They are capable of handling higher endurance and reliability requirements while working in harsher environmental conditions for extended periods without supervision.

DDR5-5600 memory solutions

The firm debuts its DDR5-5600 memory solutions at Embedded World 2024. They deliver enhanced performance, higher bandwidth, higher densities, and a new power management structure that ensures better power efficiency.

With speeds of up to 5,600MT/s, the company’s DDR5 solutions are available as registered DIMMs (RDIMMs), ECC/non-ECC unbuffered DIMMs (UDIMMs), and ECC/non-ECC small outline DIMMs (SO-DIMMs).

The firm offers industrial grade wide-temp DRAM modules to ensure better endurance and redundancy in critical environments where commercial-grade DRAMs do not suffice.

The company’s Test During Burn-In (TDBI) can detect and screen out 0.01% error, and 100% major ICs are sourced from tier-1 manufacturers to ensure reliability