Nantero Assigned Patent

Nantero, Inc., Woburn, MA, has been assigned a patent (11798623) developed by Bertin, Claude L., Ashburn, VA, for “three dimensional (3D) memories with multiple resistive change elements per cell and corresponding architecture.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”The present disclosure generally relates to multi-switch storage cells (MSSCs), three-dimensional MSSC arrays, and three-dimensional MSSC memory. Multi-switch storage cells include a cell select device, multiple resistive change elements, and an intracell wiring electrically connecting the multiple resistive change elements together and to the cell select device. MSSC arrays are designed (architected) and operated to prevent inter-cell (sneak path) currents between multi-switch storage cells, which prevents stored data disturb from adjacent cells and adjacent cell data pattern sensitivity. Additionally, READ and WRITE operations may be performed on one of the multiple resistive change elements in a multi-switch storage cell without disturbing the stored data in the remaining resistive change elements. However, controlled parasitic currents may flow in the remaining resistive change elements within the cell. Isolating each multi-switch storage cell in a three-dimensional MSSC array, enables in-memory computing for applications such as data processing for machine learning and artificial intelligence.”

The patent application was filed on 2021-11-05 (17/519828).