Micross Space-Grade 1Gb QED MRAM Qualified to NASA EEE-INST-002 Requirements for Level-2 Products With Avalanche Technology

Micross Components, Inc.’ space-grade 1Gb QED MRAM is screened and qualified to NASA’s EEE-INST-002 requirements for Level-2 products

The company expands its MRAM product offering with the addition of a 1Gb Qualified Encapsulated Device (QED), 32M x 32 BGA based on its technology partners 22nm pMTJ STT-MRAM process node topology. The 1Gb MRAM QED is a plastic encapsulated microcircuit screened and qualified to NASA electrical, electronic and electromechanical instructions. This new product offering is made possible as an extension of its partnership with Avalanche Technology, the provider in next gen MRAM technology.

The firm’s SWaP optimized Space Grade 1Gb Spin Transfer Torque QED MRAM offers random R/W access within the memory array, with the added benefit of being highly resistant to magnetic flux, mitigating the need for additional device shielding. This MRAM device certified to EEE-INST-002, section M2 as a Level 2 PEM is analogous to flash technology with an SRAM compatible R/W interface, ECC and configuration register with an added performance enhancement, an Asynchronous Page Mode feature.

Perpendicular Spin-Torque MRAM devices offer inherent protection from harsh environments and the best power profile of all non-volatile memories, making them for reliability aerospace and space applications. Micross and Avalanche continue to address the need for higher density, lower power and more compact memory solutions by providing an expanding array of densities and packaging options within the series of STT-MRAM devices based on this high-performance non-volatile memory technology.

The Spin-Torque, Persistent 1Gb QED MRAM, 32M x 32 is the latest offering in the company’s MRAM family, and available as a NASA/Goddard Space EEE-INST-002, Level 2 PEM. This device is available in two variants, either a Radiation Tolerant or as a Non-Rad device, packaged in a plastic encapsulated 17x15mm 142 solder-ball BGA . All firm’s pMTJ STT-MRAM devices provide near infinite endurance with greater than 10-year data retention across the -40°C to +125°C temperature range, as well as a voltage operating range of 2.70-3.60V with a guaranteed minimum access time of 45ns across the full military temperature range of -55°C to +125°C.

“Micross’ family of QED products is comprised of specifically selected technologies, processed to the NASA/Goddard Space Flight Center’s PEM qualification and screening practice. As such, these are prime candidates for use in high-reliability end use applications not requiring hermetic components, but that do require a higher level of reliability not normally achieved with off the shelf ‘COTS’ components. Our QED family of products include a varied selection of devices, pre-manufactured, screened, and qualified to meet the NASA EEE-INST-002 requirements for Level-2 products, and are available off-the-shelf to provide our customers with a ready supply of devices. This vastly improves our customers’ ability to meet their program schedule demands while reducing overall program risk,” stated Jeremy Adams, VP, products and services, Micross.

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