Micross Components Launches 1Gb Ceramic Space-Grade MRAM Product

Micross Components, Inc. expands its MRAM product offering with the addition of a 1Gb 32M x 32 CLGA/CBGA based on its technology partners 22nm pMTJ STT-MRAM process node topology.

This product offering is made possible as an extension of an exclusive partnership with Avalanche Technology, provider in next gen MRAM Technology.

The company‘ SWaP optimized ‘Hermetic Space Grade’ 1Gb Spin Transfer Torque MRAM device offers true random read and write access within the memory array, with the added benefit of being highly resistant to magnetic flux, mitigating the need for additional device shielding. This MRAM device architecture is analogous to flash technology with an SRAM compatible R/W interface with an added performance enhancement, an ‘Asynchronous Page Mode’ feature. Perpendicular Spin-Torque MRAM devices offer inherent protection from harsh environments and a best power profile of all non-volatile memories, making them suited for hi-reliability aerospace and space applications. The 2 partners are addressing the need for lower power and more compact memory solutions by providing a series of STT-MRAM devices based on this performance non-volatile memory technology.

The Spin-Torque Persistent MRAM 1Gb, 32M x 32 is the latest density offered in the company’s MRAM family. The 1Gb STT-MRAM is available with Space and Military QML quality flows, and two hermetic 18x20mm package variants (CLGA and CBGA in 142 pad/solder-ball definitions) in RAD-HARD, RAD-Tolerant and Non-Radiation offerings. This product provides near infinite endurance with greater than 10-year data retention across the -40°C to +125°C temperature range as well as a voltage operating range of 2.70-3.60V with a guaranteed minimum access time of 45ns across the military temperature range.

“Avalanche’s next-gen 22nm Perpendicular Spin Transfer Torque MRAM technology has enabled Micross to provide greater SWaP savings through the addition of our 1Gb Hermetic MRAM to Micross’ hi-reliability memory portfolio. Micross’ 1Gb MRAM offers more than 64X the density of our initial 16Mb MRAM, with an improved bit density per mm² of 2.844Mb as compared with a bit density per mm² of 163.84Kb,” said Jeremy Adams, VP, products and services, Micross. “The low power, infinite endurance, high performance and scalability of Avalanche’s next gen STT-MRAM technology allows Micross to continue delivering the world’s most compact and efficient, non-volatile hi-reliability memory solutions for the aerospace and space industries.“

About Micross
It is a provider of microelectronic services and component, die and wafer Solutions. With the broadest authorized access to die and wafer suppliers, and advanced packaging, assembly, modification and test capabilities, the company is positioned to provide high-reliability solutions from bare die, to fully packaged devices, to complete program lifecycle sustainment. For more than 40 years, the firm has been a trusted source for the aerospace, defense, space, medical and industrial markets.