SunRise Memory Assigned Two Patents

Three-dimensional vertical NOR flash thin-film transistor strings
SunRise Memory Corp., Fremont, CA, has been assigned a patent (11,049,879) developed by Harari, Eli, and Yan, Tianhong, Saratoga, CA , for “three-dimensional vertical NOR flash thin-film transistor strings.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A memory structure, includes active columns of polysilicon formed above a semiconductor substrate, each active column includes one or more vertical NOR strings, with each NOR string having thin-film storage transistors sharing a local source line and a local bit line, the local bit line is connected by one segment of a segmented global bit line to a sense amplifier provided in the semiconductor substrate.”

The patent application was filed on October 12, 2020 (Appl. No.17/068,539).

Epitaxial monocrystalline channel for storage transistors in 3-D memory structures
SunRise Memory Corp., Fremont, CA, has been assigned a patent (11,049,873) developed by Hu, Chenming, Oakland, CA, Chien, Wu-Yi Henry, San Jose, CA, and Harari, Eli, Saratoga, CA, for “epitaxial monocrystalline channel for storage transistors in 3-dimensional memory structures and methods for formation thereof.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: ”A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity, and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a monocrystalline semiconductor substrate.”

The patent application was filed on September 23, 2019 (Appl. No.16/578,970).