Embedded World: Everspin Developing STT-MRAM for Industrial IoT Applications

Everspin Technologies, Inc. announced the development of STT-MRAM specifically for IoT applications at Embedded World in Germany.

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Building on the 1Gb Spin-transfer Torque MRAM, the company is developing a STT product family to deliver the attributes required by broad industrial applications, providing:

Data persistence (non-volatility) with data retention of >10 years
Unlimited endurance
8Mb to 256Mb densities
-40°C to 85°C operating temperature range
SRAM-like performance, low latency and high bandwidth
Standard JEDEC Serial interface (SPI, QSPI, OSPI, xSPI)
Compatibility with the firm’s existing Serial Toggle MRAM as well as nvSRAM, FRAM and NOR flash

The company currently supports more than 1,000 customers with its Toggle MRAM that delivers all the benefits above for industrial applications at the smaller 128Kb-32Mb densities. With the increasing bandwidth, features, code and storage requirements for industrial applications driven by 5G, the need for higher densities will accelerate. MRAM is often used as a universal memory in these applications, being fast enough to execute code as well as provide persistent storage for all data captured. The Industrial/IoT STT-MRAM will deliver densities of 8Mb to 256Mb, complementing and extending the current Toggle MRAM Serial interface products of 128Kb to 4Mb. To complete the portfolio, the firm provides Toggle Parallel interface devices up to 32Mb and a 1Gb STT-MRAM with a DDR4 interface for the data center market. Each of these product lines meet specific and critical customer requirements and will remain a focus for both new and sustaining design wins for the future.

“Everspin continues to set the standard as the most durable, highest performance persistent memory in the industry,” said Troy Winslow, VP, sales and marketing, Everspin. “Being able to bring the scalability and lower cost of STT-MRAM into the industrial and IoT market segments is driven by our broad customer base and enabled through the successful commercialization of our 1Gb STT-MRAM and more than a decade of Toggle MRAM deployments into these markets.“

The company’s STT-MRAM and Toggle MRAM devices allow enterprise infrastructure, data center, industrial, IoT and a host of other application providers to increase the reliability and performance of systems where performance data persistence is critical. This is achieved by delivering protection vs. power loss without the use of super-capacitors or batteries, and in many applications providing the performance and endurance required for code and storage in a single persistent device.

The Industrial/IoT STT-MRAM is currently in development on the same 28nm lithography platform as the 1Gb STT-MRAM and will be sampling in 2H20.

Read also:
Everspin Design Guide for Using 1Gb STT-MRAM With Xilinx DDR4 FPGA Controller
Supporting STT-MRAM for two gens and enabling 1Gb STT-MRAM solution using DDR4 controller in Xilinx Vivado development environment
January 31, 2020 | Press Release
Everspin Achieved Data Center OEM Qualification of 1Gb STT-MRAM Solution
And announced pilot manufacturing of 28nm 1Gb device.
December 20, 2019 | Press Release
Everspin Doubles Capacity of Toggle MRAM at 32Mb
Replacement for legacy SRAM sockets
November 7, 2019 | Press Release
Everspin Expands STT-MRAM Ecosystem Support for 1Gb STT-MRAM With Cadence Design and Verification IP
Customers will be able to request MRAM-enabled IP and VIP for custom ASIC solutions, STT-MRAM products include 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions.
August 15, 2019 | Press Release
FMS: Everspin Builds Ecosystem for 1Gb Spin-Transfer Torque MRAM
Partnership with Phison, Sage Microelectronics and Cadence Design
August 13, 2019 | Press Release