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Everspin Design Guide for Using 1Gb STT-MRAM With Xilinx DDR4 FPGA Controller

Supporting STT-MRAM for two gens and enabling 1Gb STT-MRAM solution using DDR4 controller in Xilinx Vivado development environment

Everspin Technologies, Inc. announced a design guide to streamline the integration of its 1Gb Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) product in the storage marketplace.

Everspin Emd4e001g Spin Torque

Xilinx, Inc. has been supporting STT-MRAM for 2 generations and enables the 1Gb STT-MRAM solution using its DDR4 controller in the Xilinx Vivado development environment.

The two companies integrated solution provides benefits, with the design guide and tools structured to address:

  • Timing: Reducing operating frequency, increasing row access timing, increasing counter widths and reducing CAS page sizes

  • Power-Up: Enabling anti-scribble mode during calibration

  • Power-Down: Scramming or moving all relevant data into the persistent memory array

  • Performance: Increasing pipeline depth and data transfer efficiency

  • Scripts: Providing Verilog models and other detailed information to get storage OEM’s design up and running effectively

MRAM and persistent memory is an increasingly important technology across a broad range of solutions, said Jamon Bowen, director, planning and storage segment, data center group, Xilinx. “We see many applications where advanced capabilities like power loss protection is critical. It’s exciting to see partners like Everspin make it easy for customers to develop world-class memory sub-systems leveraging the Xilinx platform.“

STT-MRAM devices allow enterprise infrastructure and data center providers to increase the reliability and performance of systems where performance data persistence is critical. This is achieved by delivering protection against power loss without the use of supercapacitors or batteries. In addition, the 1Gb part offers more effective management of I/O streams, creating a greater level of latency determinism and allowing storage OEMs to improve quality of service of their products. Similar benefits can also be achieved using the 1Gb STT-MRAM device as a persistent data write buffer in storage and fabric accelerators, computational storage, and other applications.

We value our partnership with Xilinx and continue to collaborate with them to bring our STT-MRAM solutions to market,said Troy Winslow, VP, sales and marketing, Everspin. “Providing this design guide and tools will help streamline integration and time to market for our customers in providing enhanced applications for data centers.

Resource:
Everspin ST-DDR4 Design Guide for Xilinx FPGA controllers
Blog

Read also :
Everspin Achieved Data Center OEM Qualification of 1Gb STT-MRAM Solution
And announced pilot manufacturing of 28nm 1Gb device.
December 20, 2019 | Press Release
Everspin Expands STT-MRAM Ecosystem Support for 1Gb STT-MRAM With Cadence Design and Verification IP
Customers will be able to request MRAM-enabled IP and VIP for custom ASIC solutions, STT-MRAM products include 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions.
August 15, 2019 | Press Release
FMS: Everspin Builds Ecosystem for 1Gb Spin-Transfer Torque MRAM
Partnership with Phison, Sage Microelectronics and Cadence Design
August 13, 2019 | Press Release
Everspin in Pilot Production Phase for 28nm 1GB STT-MRAM Component
Enabling higher density and DDR4-based interface
June 20, 2019 | Press Release

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