R&D: Exploring Ultrafast Threshold Switching in In3SbTe2 PCM Devices

Nature Scientific Reports has published an article written by Nishant Saxena, Discipline of Electrical Engineering, Indian Institute of Technology Indore, Indore, 453552, Madhya Pradesh, India, Christoph Persch, Matthias Wuttig, I. Physikalisches Institut (I.A.) and JARA-Fundamentals of Future Information Technology, RWTH Aachen University, 52056, Aachen, Germany, and Anbarasu Manivannan, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, 600036, Tamil Nadu, India.

Abstract: “Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In₃SbTe₂ (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.“