Everspin Achieved Data Center OEM Qualification of 1Gb STT-MRAM Solution

Everpin Technologies, Inc. announced receiving the qualification notice from a major server OEM of its 1Gb Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) device.

This qualification notice affirms the quality, performance and specs of the 1Gb device and enables its use in the production of products for this customer.

Earlier this summer, the company announced pilot manufacturing of its 28nm 1Gb device and is now qualified to make production shipments to its first qualifying customer. No other manufacturer has achieved production of any discrete STT-MRAM device, a testament to the firm’s position in the field having achieved production of its 256Mb STT-MRAM in 2017. To date, the company has produced more than 120 million units of its Toggle and STT-MRAM devices.

“We continue to make great strides in the commercialization of MRAM across many market segments, including the data center,” said Kevin Conley, president and CEO, Everspin. “It is very rewarding to see the completion of this very important customer milestone with our 1Gb STT- MRAM, along with the collaboration that has taken place with our customers and our ecosystem partners.“

The company’s STT-MRAM devices allow enterprise infrastructure and data center providers to increase the reliability and performance of systems where low latency data persistence is critical. This is achieved by delivering protection vs. power loss and allowing storage OEMs to improve QoS of their products. Similar benefits can also be achieved using the 1Gb STT-MRAM device as a persistent data write buffer in storage and fabric accelerators, computational storage, and other applications.

The data center OEM name is not being disclosed as they have not yet announced their end product(s).

Resource:
Company’s blog

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