Flash Memory Summit: Everspin Sampling 1Gb ST-MRAM Product

Everspin Technologies, Inc., has begun sampling its 1Gb Spin Torque Magneto-resistive Random Access Memory (ST-MRAM) with lead customers.

This product delivers a high-endurance, persistent memory with a DDR4- compatible interface. These features enable storage system vendors to enhance the reliability and performance of storage devices and systems by delivering protection against power loss without the use of super-capacitors or batteries. Enterprise SSD designers can take advantage of fast persistent memory that is inherently power fail-safe while also reducing write amplification and over-provisioning, common limitations for NAND Flash-based SSDs.

Everspin demonstrated the EMD4E001G at the Flash Memory Summit in Santa Clara on August 7-10.

This ST-MRAM product provides 4 times the capacity of Everspin’s current 256Mb DDR3 ST-MRAM and was shown running in Everspin’s nvNITROstorage accelerator products.

The 1Gb MRAM is produced in 28nm CMOS on 300mm wafers in partnership with GlobalFoundries, Inc., utilizing Everspin’s patented perpendicular magnetic tunnel junction (pMTJ) technology. The rapid development of the 1Gb part is a direct result of the degree of scalability of the pMTJ, moving from 40nm to 28nm processes in less than one year through close partnership with GlobalFoundries.

“We are very excited to begin sampling our 1GB product,” said Phill LoPresti, Everspin’s president and CEO. “Getting our latest technology into customers’ hands so they can develop their products to take advantage of the unique capabilities of high-endurance, fast, persistent memory is a significant milestone for Everspin.“